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Ogawa, Shuichi*; Takakuwa, Yuji*; Ishizuka, Shinji*; Mizuno, Yoshiyuki*; Tonda, Hideki*; Homma, Teiichi*; Teraoka, Yuden; Yoshigoe, Akitaka; Moritani, Kosuke; Hachiue, Shunsuke
JAERI-Tech 2004-046, 25 Pages, 2004/06
JAERI-Tech-2004-046.pdf:2.51MB
We investigated the correlation between initial sticking coefficient and O
transitional kinetic energy to understand O adsorption processes on the Ti(0001) surface via photoemission spectroscopy for O-1s and Ti-2p core levels using the surface reaction analysis apparatus, installed at the JAERI soft X-ray beamline BL23SU in the SPring-8. We observed the decrease of initial sticking coefficient of O molecules on the Ti(0001) surface with increasing O transitional kinetic energy. We concluded that the O adsorption on the Ti(0001) surface proceeded by a trapping-mediated dissociative adsorption mechanism. The constant dependence of the initial sticking coefficient on incident angle of O beams also suggested the propriety of the trapping-mediated surface reaction mechanism.
Yoshigoe, Akitaka; Moritani, Kosuke; Teraoka, Yuden
Japanese Journal of Applied Physics, Part 1, 42(7B), p.4676 - 4679, 2003/07
Times Cited Count：1 Percentile：5.63(Physics, Applied)Many studies of the thermal oxidation on Si(001) surface by O gas have been already carried out from both experimental and theoretical methods. The oxidation reaction kinetics have been studied by real time photoemission spectroscopy. Most reports, however, were performed at a fixed electron binding energy. We present the study of initial stage of thermal oxidation on Si(001) surface at the O pressure of 1x10
Pa performed by real time O-1s synchrotron radiation photoemission spectroscopy.All experiments were performed at SUREAC2000 at BL23SU in the SPring-8. The pure O gas of 1x10 Pa was fed into the reaction analysis chember through a variable leak valve. The results of oxygen uptake curves obtained by O-1s peak area intensities at the substrate temperature of 855K and 955K indicate that the Langmuir adsorption model provided the best fitting result for the 855K oxidation, whereas the oxidation at 955K was well explained by the autocatalytic reaction model.
Yoshigoe, Akitaka; Moritani, Kosuke; Teraoka, Yuden
Japanese Journal of Applied Physics, Part 1, 42(6B), p.3976 - 3982, 2003/06
Times Cited Count：6 Percentile：28.14(Physics, Applied)It is well known that the thermal oxidation on Si(001) surface is an important reaction system to form of the gate-oxide films in MOSFET, since it is necessary to control the film thickness under a few nano-meter scale. Thus, we have studied the oxygen uptake and the Si oxidation states depending on the oxidation times by using the synchrotron radiation photoemission spectroscopy in 1
10Pa of O at the surface temperature from 870K to 1120K. We clarified the oxidation depending on the surface temperature was explained by the kinetics (Langumuir and auto-catalytic model). Using real time photoemission spectroscopy, we found that the Si
sepcies was not formed at the initial oxidation stage.
Teraoka, Yuden; Yoshigoe, Akitaka
Oyo Butsuri, 71(2), p.1523 - 1527, 2002/12
The translational kinetic energy of incident molecules is an important parameter for the study of surface chemical reaction mechanisms. New adsorption reactions, induced by the O translational kinetic energy of several eV, have been found in the O/Si(001) system by applying the surface photoemission spectroscopy with supersonic molecular beam techniques and the high-energy-resolution synchrotron radiation. The termination of dangling bonds affected dominantly the oxidation of dimer backbonds. By controlling the translational kinetic energy of incident O molecules, the formation of oxide-layers with a sub-nanometer scale is possible at room temperature.
Tanaka, Kazuma*; Ono, Shinya*; Kodama, Hiraku*; Abe, Sosuke*; Miura, Shu*; Narishige, Takuma*; Yoshigoe, Akitaka; Teraoka, Yuden; Tanaka, Masatoshi*
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